Tip-gating effect in scanning impedance microscopy of nanoelectronic devices
نویسندگان
چکیده
منابع مشابه
Scanning Probe Techniques for Engineering Nanoelectronic Devices
microscopy-based techniques is enabling new ways to build and investigate nanoscale electronic devices. Here we review several advanced techniques to characterize and manipulate nanoelectronic devices using an atomic force microscope (AFM). Starting from a carbon nanotube (CNT) network device that is fabricated by conventional photolithography (micron-scale resolution) individual carbon nanotub...
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Using CNT network sensors as our working example, we review AFM-based techniques which are used to study and engineer nanoelectronic devices. We have used dc-EFM and ac-EFM to identify the locations and resistances of individual CNTs that are electrically connected in parallel. Next, 5GM and tm-SGM were used to reveal the semiconducting response of each CNT. With the information available in th...
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Calculations of the interaction between a magnetic tip of an atomic force microscope with a magnetic surface using the non-collinear extension of the Alexander-Anderson model are described. The mechanism and rate of thermally activated magnetic transitions in a cluster of atoms at the tip is investigated. The results are compared with experimental data and found to be in good agreement with mea...
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Impedance spectroscopy has long been recognized as one of the major techniques for the characterization of ac transport in materials. The primary limitation of this technique is the lack of spatial resolution that precludes the equivalent circuit elements from being unambiguously associated with individual microstructural features. Here we present a scanning probe microscopy technique for quant...
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Scanning Impedance Microscopy (SIM) is one of the novel scanning probe microscopy (SPM) techniques, which has been developed to taking image from sample surface, providing quantitative information with high lateral resolution on the interface capacitance, and investigating the local capacitance–voltage (C–V) behavior of the interface and AC transport properties. The SIM is an ordinary AFM equip...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2002
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1531833